2008-07-29 rev 2.2 page 1 spd30p06p sipmos power-transistor features p-channel enhancement mode avalanche rated d v /d t rated 175c operating temperature product summary drain source voltage v v ds -60 drain-source on-state resistance r ds(on) 0.075 w continuous drain current a i d -30 type package spd30p06p p-to252-3 pin 1 pin 2/4 pin 3 g d s maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol unit value -30 -21.5 a continuous drain current t c = 25 c t c = 100 c i d pulsed drain current t c = 25 c i d puls -120 avalanche energy, single pulse i d = -30 a , v dd = -25 v, r gs = 25 w 250 mj e as avalanche energy, periodic limited by t jmax e ar 12.5 d v /d t 6 reverse diode d v /d t i s = -30 a, v ds = -48 v, d i /d t = 200 a/s, t jmax = 175 c kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 125 w operating and storage temperature t j , t stg -55...+175 c iec climatic category; din iec 68-1 55/175/56
2008-07-29 rev 2.2 page 2 spd30p06p thermal characteristics parameter symbol unit values min. max. typ. characteristics r thjc - 1.2 - thermal resistance, junction - case k/w - 100 r thja thermal resistance, junction - ambient, leaded - smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -250 a v (br)dss -60 - v - gate threshold voltage, v gs = v ds i d = -1.7 ma -2.1 -3 -4 v gs(th) zero gate voltage drain current v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 150 c a -1 -100 i dss -0.1 -10 - - i gss - -10 -100 gate-source leakage current v gs = -20 v, v ds = 0 v na drain-source on-state resistance v gs = -10 v, i d = -21.5 a r ds(on) - 0.069 0.075 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2008-07-29 rev 2.2 page 3 spd30p06p electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = -21.5 a 5.2 g fs s - 10.4 input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss 1228 1535 pf - c oss - 383 387 output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz 177 142 c rss - turn-on delay time v dd = -30 v, v gs = -10 v, i d = -21.5 a, r g = 1.6 w - 19.5 ns 13 t d(on) rise time v dd = -30 v, v gs = -10 v, i d = -21.5 a, r g = 1.6 w t r - 16.5 11 30 45 t d(off) turn-off delay time v dd = -30 v, v gs = -10 v, i d = -21.5 a, r g = 1.6 w - fall time v dd = -30 v, v gs = -10 v, i d = -21.5 a, r g = 1.6 w t f - 20 30
2008-07-29 rev 2.2 page 4 spd30p06p electrical characteristics, at t j = 25 c, unless otherwise specified unit values symbol parameter min. typ. max. dynamic characteristics gate to source charge v dd = -48 v, i d = -30 a - q gs nc 5.6 3.7 gate to drain charge v dd = -48 v, i d = -30 a q gd 13.8 20.7 - 48 - q g gate charge total v dd = -48 v, i d = -30 a, v gs = 0 to -10 v 32 gate plateau voltage v dd = -48 v , i d = -30 a v (plateau) - -5.2 - v parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - -30 a inverse diode direct current,pulsed t c = 25 c i sm - - -120 inverse diode forward voltage v gs = 0 v, i f = -30 v sd - -1.3 -1.7 v reverse recovery time v r = -30 v, i f = i s , d i f /d t = 100 a/s t rr - 64.6 97 ns reverse recovery charge v r = -30 v, i f = l s , d i f /d t = 100 a/s q rr - 153 230 nc
2008-07-29 rev 2.2 page 5 spd30p06p drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 -4 -8 -12 -16 -20 -24 a -32 spd30p06p i d power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spd30p06p p tot transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spd30p06p z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds 0 -10 1 -10 2 -10 3 -10 a spd30p06p i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 31.0 s
2008-07-29 rev 2.2 page 6 spd30p06p typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 -10 -20 -30 -40 a -60 i d 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 w 0.26 spd30p06p r ds(on) c v gs [v] = c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 -2 -4 -6 -8 -10 v -13 v ds 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 a -75 spd30p06p i d v gs [v] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k p tot = 125.00 w k -10.0 typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v gs 0 -10 -20 -30 -40 a -60 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 i d 0 1 2 3 4 5 6 7 8 9 10 11 s 13 g fs
2008-07-29 rev 2.2 page 7 spd30p06p drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -21.5 a, v gs = -10 v -60 -20 20 60 100 140 c 200 t j 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 w 0.24 spd30p06p r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -1.7 ma -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 98% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 2% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 -5 -10 -15 -20 -25 v -35 v ds 2 10 3 10 4 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd 0 -10 1 -10 2 -10 3 -10 a spd30p06p i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2008-07-29 rev 2.2 page 8 spd30p06p avalanche energy e as = f ( t j ) para.: i d = -30 a , v dd = -25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as typ. gate charge v gs = f ( q gate ) parameter: i d = -30 a pulsed 0 10 20 30 40 nc 55 q gate 0 -2 -4 -6 -8 -10 -12 v -16 spd30p06p v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 spd30p06p v (br)dss
rev 2.2 page 9 2008-07-29
2008-07-29 rev 2.2 page 10 spd30p06p published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appl ication of the device, infineon technologies hereby disclaims any and all warranties and liabilitie s of any kind, including without limitation, warranties of non-infringement of intellect ual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact t he nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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